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John L.
Advances in Research and Development
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3837268Advances in Research and Developmenthttps://www.gandhi.com.mx/advances-in-research-and-development-9780080542904/phttps://gandhi.vtexassets.com/arquivos/ids/3228113/a1853ac4-04e7-45c3-bbee-f7269c45de41.jpg?v=638385061900870000MXNAcademic PressOutOfStock/Ebooks/<p>Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.</p>...3773376Advances in Research and Development00https://www.gandhi.com.mx/advances-in-research-and-development-9780080542904/phttps://gandhi.vtexassets.com/arquivos/ids/3228113/a1853ac4-04e7-45c3-bbee-f7269c45de41.jpg?v=638385061900870000OutOfStockMXN0DIEbook19979780080542904_W3siaWQiOiIyMDI5MzlmYS1lNGM1LTQwYjgtOTQyYy04ZGM5N2U1YzNmZTMiLCJsaXN0UHJpY2UiOjI5OTEsImRpc2NvdW50IjoyOTksInNlbGxpbmdQcmljZSI6MjY5MiwiaW5jbHVkZXNUYXgiOnRydWUsInByaWNlVHlwZSI6Ildob2xlc2FsZSIsImN1cnJlbmN5IjoiTVhOIiwiZnJvbSI6IjIwMjUtMDEtMDhUMTk6MDA6MDBaIiwicmVnaW9uIjoiTVgiLCJpc1ByZW9yZGVyIjpmYWxzZX1d9780080542904_<p>Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.</p>(*_*)9780080542904_<p>Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.</p>...9780080542904_Elsevier Science(*_*)9780080542904_Academic Presslibro_electonico_a9c54f78-73c0-36dc-8e90-d2b6579a1256_9780080542904;9780080542904_9780080542904John L.InglésMéxicoAcademic Presshttps://getbook.kobo.com/koboid-prod-public/elsevierrefmonographs-epub-4667042d-fde8-4275-ba02-96bf536f42a1.epub1997-11-14T00:00:00+00:00